Batch type SWP assembling device
Damage-free, high rate, large area compatible, complete removal of ion damage, achieving complete radical processing. High-performance plasma ashing device.
High-density plasma generated by surface wave excited plasma is completely shielded from ions using an ion shielding trap. Only radicals are supplied to the substrate. Achieves damage-free ashing equivalent to wet processes with high-density radicals. Balances high rate and damage-free ashing. Compact batch type suitable for small substrates, compound semiconductors, and MEMS devices. Demonstrates excellent effectiveness in removing organic film sacrificial layers in MEMS manufacturing processes. An essential resist ashing device for high-end MEMS devices.
- Company：神港精機 東京支店
- Price：Other
